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U.S. Department of Energy
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Novel Thin-Film CuInSe2 Fabrication, Annual Subcontract Report, 1 May 1991 - 30 April 1992

Technical Report ·
DOI:https://doi.org/10.2172/7023165· OSTI ID:7023165
This report describes work to form thin films of CuInSe{sub 2} (CIS) by annealing precursor films containing Cu, In, and Se in a rapid thermal processor. This involves two steps: (1) a precursor containing Cu, In, and Se is deposited on unheated substrates such that CIS does not form during this deposition step, and (2) the precursor is annealed in a rapid thermal processor to crystallize the CIS. Advantages of this process are that (1) no H{sub 2}Se is used; (2) concentration gradients can potentially be built into the film due to the rapid anneal; and (3) the precursor can potentially be deposited using scalable methods such as sputtering, solution growth, and electrodeposition. The deposition method used was three-source, elemental physical vapor deposition. At room temperature, such a method was considered to be a flexible way to deposit a precursor that would be fairly typical of precursors deposited by more scalable techniques. Precursors were made both by the stacked elemental layer approach, where one element at a time wsas evaporated, as well as by a co-evaporation method. Adhesion problems limited device performance, and the co-evaporated precursors displayed unintended segregation of Cu and I in a direction normal to the film plane. The best cell efficiency was 3.5%.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
7023165
Report Number(s):
NREL/TP-451-5014; ON: DE92016440
Country of Publication:
United States
Language:
English