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U.S. Department of Energy
Office of Scientific and Technical Information

Novel Thin-Film CuInSe2 Fabrication, Annual Subcontract Report, 1 March 1990 - 30 April 1991

Technical Report ·
DOI:https://doi.org/10.2172/5784395· OSTI ID:5784395
This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
5784395
Report Number(s):
NREL/TP-411-4752; ON: DE92001222
Country of Publication:
United States
Language:
English