Radiative recombination in CuInSe{sub 2} thin films
- Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, Mommsenstrasse 13, D-01062 Dresden (Germany)
- Institut fuer Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart (Germany)
We perform a detailed analysis of the radiative recombination processes in CuInSe{sub 2} thin films grown by multisource physical vapor deposition. The photoluminescence and photoluminescence excitation spectra are investigated as a function of stoichiometry, temperature and excitation intensity. Using samples with a large composition gradient, we are able to obtain a coherent picture of the optical transitions in the films. The broad{endash}band photoluminescence spectrum typical for In{endash}rich films breaks into a number of well{endash}defined emission lines in Cu{endash}rich CuInSe{sub 2}. At low temperatures, emission peaks due to free{endash}exciton, bound{endash}exciton, and free{endash}to{endash}bound recombination are identified in Cu{endash}rich films. The spectra of In{endash}rich films tend to be dominated by donor{endash}acceptor transitions. From the optical spectra, exciton ionization energies and the temperature dependence of the band gap are determined. The observed optical transitions are related to intrinsic defects. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 530043
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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