Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates

Journal Article · Mon Apr 17 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2196476· OSTI ID:20779131

Zhu, Y Y; Chen, S; Xu, R; Fang, Z B; Zhao, J F; Fan, Y L; Yang, X J; Jiang, Z M ^[1]

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1. Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 (China)

The experimental data on band alignments of high-k Er{sub 2}O{sub 3} films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er{sub 2}O{sub 3} to Si are obtained to be 3.1{+-}0.1 and 3.5{+-}0.3 eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band. The energy gap of Er{sub 2}O{sub 3} is determined to be 7.6{+-}0.3 eV. From the band offset viewpoint, those obtained numbers indicate that Er{sub 2}O{sub 3} could be a promising candidate for high-k gate dielectrics.

• OSTI ID: 20779131
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DIELECTRIC MATERIALS
ENERGY GAP
ERBIUM OXIDES
EV RANGE 01-10
EXPERIMENTAL DATA
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY