Band offsets in ZrO{sub 2}/InGaZnO{sub 4} heterojunction

Journal Article · Mon Aug 27 04:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4750069· OSTI ID:22089407

Jianke, Yao ^[1]; Shengdong, Zhang ^[1]; Li, Gong ^[2]

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1. School of Computer and Information Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055 (China)
2. Instrumental Analysis and Research Center, Sun Yat-Sen University, Guangzhou 510275 (China)

X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band ( White-Up-Pointing-Triangle E{sub V}) of amorphous InGaZnO{sub 4} (a-IGZO)/ZrO{sub 2} heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of White-Up-Pointing-Triangle E{sub V}= 0 eV was obtained by using the Ga and Zn 2p{sup 3} and In 3d{sup 3} energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO{sub 2}, respectively, this would indicate a conduction band offset of 2.7 eV in the system.

• OSTI ID: 22089407
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 101; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
OXYGEN COMPOUNDS
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC COMPOUNDS
ZIRCONIUM OXIDES