Band offsets of La{sub 2}O{sub 3} on (0001) GaN grown by reactive molecular-beam epitaxy
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
La{sub 2}O{sub 3} films were prepared on (0001)-oriented GaN substrates via reactive molecular-beam epitaxy. Film orientation and phase were assessed using reflection high-energy electron and X-ray diffraction. Films were observed to grow as predominantly hexagonal La{sub 2}O{sub 3} for thicknesses less than 10 nm while film thickness greater than 10 nm favored mixed cubic and hexagonal symmetries. Band offsets were characterized by X-ray photoelectron spectroscopy on hexagonally symmetric films and valence band offsets of 0.63 {+-} 0.04 eV at the La{sub 2}O{sub 3}/GaN interface were measured. A conduction band offset of approximately 1.5 eV could be inferred from the measured valence band offset.
- OSTI ID:
- 22162859
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 102; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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