The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals
- Lviv National Polytechnical University, Lviv, 290013 (Ukraine)
- Karpov Institute of Physical Chemistry (Obninsk Branch), Obninsk, Kaluga oblast, 249033 (Russian Federation)
- Kuznetsov Physicotechnical Institute, Tomsk State University, Tomsk, 634050 (Russian Federation)
The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n{sup +}-InSb whisker microcrystals are reported (the measurements were carried out in the course of the irradiation). The optimum concentration of free electrons n for providing the highest possible radiation resistance of the InSb sensors is estimated (n {approx_equal} (6-7) x 10{sup 17} cm{sup -3}). The contributions of two competing processes to variation in the electrical properties of InSb under neutron irradiation (transmutation-related doping of InSb with a Sn shallow-level donor impurity and compensation of the initial n{sup +}-InSb conductivity as a result of generation of deep-level acceptor-type radiation defects) are determined separately.
- OSTI ID:
- 20719079
- Journal Information:
- Semiconductors, Vol. 39, Issue 7; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 814-819 (No. 7, 2005); DOI: 10.1134/1.1992633; (c) 2005 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); TN:; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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