The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals

Journal Article · Fri Jul 15 04:00:00 EDT 2005 · Semiconductors

DOI:https://doi.org/10.1134/1.1992633· OSTI ID:20719079

Bolshakova, I A; Makido, E Yu; Moskovets, T A ^[1]; Boiko, V M; Kolin, N G; Merkurisov, D I ^[2]; Brudnyi, V N; Kamenskaya, I V ^[3]

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1. Lviv National Polytechnical University, Lviv, 290013 (Ukraine)
2. Karpov Institute of Physical Chemistry (Obninsk Branch), Obninsk, Kaluga oblast, 249033 (Russian Federation)
3. Kuznetsov Physicotechnical Institute, Tomsk State University, Tomsk, 634050 (Russian Federation)

The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n{sup +}-InSb whisker microcrystals are reported (the measurements were carried out in the course of the irradiation). The optimum concentration of free electrons n for providing the highest possible radiation resistance of the InSb sensors is estimated (n {approx_equal} (6-7) x 10{sup 17} cm{sup -3}). The contributions of two competing processes to variation in the electrical properties of InSb under neutron irradiation (transmutation-related doping of InSb with a Sn shallow-level donor impurity and compensation of the initial n{sup +}-InSb conductivity as a result of generation of deep-level acceptor-type radiation defects) are determined separately.

• OSTI ID: 20719079
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 39; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELECTRONS
FAST NEUTRONS
IBR-2 REACTOR
IMPURITIES
INDIUM ANTIMONIDES
IRRADIATION
MAGNETIC FIELDS
SEMICONDUCTOR MATERIALS
TRANSMUTATION
WHISKERS