Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2015.08.016· OSTI ID:22584243

Ostrovskii, I.; Khoverko, Yu. ^[1]; Liakh-Kaguy, N.; Khytruk, I. ^[1]; Rogacki, K. ^[2]

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1. Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine)
2. International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

• OSTI ID: 22584243
• Journal Information: Materials Research Bulletin, Vol. 72; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CONCENTRATION RATIO
CRYSTAL DEFECTS
EFFECTIVE MASS
ELECTRON MOBILITY
INDIUM ANTIMONIDES
LANDE FACTOR
LATTICE PARAMETERS
MAGNETIC PROPERTIES
MAGNETORESISTANCE
PHASE TRANSFORMATIONS
PHONONS
PIEZOELECTRICITY
SEMICONDUCTOR MATERIALS
SHUBNIKOV-DE HAAS EFFECT
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
WHISKERS