Tunable far-infrared source-detector system based on Landau-level transitions in n-InSb
Journal Article
·
· IEEE Trans. Microwave Theory Tech.; (United States)
The radiative emission from impact-ionized shallow donors in n-type InSb provides a tunable far-infrared source, the properties and applications of which are investigated. To obtain optimum conditions, the radiation intensity is studied independent of the sample volume and the electric- and magnetic-field intensities. The source is applied to measure the Zeeman splitting of the shallow donors in n-InP and n-GaAs.
- Research Organization:
- Technische Hochschule, Vienna
- OSTI ID:
- 7337654
- Journal Information:
- IEEE Trans. Microwave Theory Tech.; (United States), Journal Name: IEEE Trans. Microwave Theory Tech.; (United States) Vol. MTT-22:12; ISSN IETMA
- Country of Publication:
- United States
- Language:
- English
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