Tunable stimulated Raman scattering in the far infrared
Journal Article
·
· Appl. Phys. Lett.; (United States)
We propose a tunable electronic Raman-scattering process which yields tuning of the scattered frequency over >10 cm/sup -1/ in the far infrared. For a specific example of donor levels in GaAs and an incident photon frequency of approx.66.2 cm/sup -1/ (151 ..mu..m), a magnetic field of 10--30 kG yields Raman-scattering cross sections of 10/sup -24/--10/sup -23/ cm/sup 2/ sr/sup -1/. We show that a tunable Raman laser covering a frequency region from approx.30.7 to approx.16.0 cm/sup -1/ (i.e., from approx.325 to approx.625 ..mu..m) is feasible.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6339706
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:5; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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