Annealing behavior between room temperature and 2000 deg. C of deep level defects in electron-irradiated n-type 4H silicon carbide
- Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
The annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature and an isochronal annealing series from 100 to 2000 deg. C has been performed. The DLTS measurements, which have been carried out in the temperature range from 120 to 630 K after each annealing step, revealed the presence of six electron traps located in the energy range of 0.45-1.6 eV below the conduction-band edge (E{sub c}). The most prominent and stable ones occur at E{sub c}-0.70 eV (labeled Z{sub 1/2}) and E{sub c}-1.60 eV(EH{sub 6/7}). After exhibiting a multistage annealing process over a wide temperature range, presumably caused by reactions with migrating defects, a significant fraction of both Z{sub 1/2} and EH{sub 6/7} (25%) still persists at 2000 deg. C and activation energies for dissociation in excess of 8 and {approx}7.5 eV are estimated for Z{sub 1/2} and EH{sub 6/7}, respectively. On the basis of these results, the identity of Z{sub 1/2} and EH{sub 6/7} is discussed and related to previous assignments in the literature.
- OSTI ID:
- 20714059
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 4; Other Information: DOI: 10.1063/1.2009816; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ACTIVATION ENERGY
ANNEALING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISSOCIATION
DOPED MATERIALS
ELECTRON BEAMS
EPITAXY
EV RANGE 01-10
MEV RANGE 10-100
NITROGEN
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
TRAPS