Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide

Journal Article · Thu Dec 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2139831· OSTI ID:20714151

Alfieri, G; Monakhov, E V; Svensson, B G; Hallen, A ^[1]

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1. Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)

Using deep level transient spectroscopy (DLTS), we have studied the energy position and thermal stability of deep levels in nitrogen doped 4H-SiC epitaxial layers after 1.2 MeV proton implantation and 15 MeV electron irradiation. Isochronal annealing was performed at temperatures from 100 to 1200 deg. C in steps of 50 deg. C. The DLTS measurements, which were carried out in the temperature range from 120 to 630 K after each annealing step, reveal the presence of ten electron traps located in the energy range of 0.45-1.6 eV below the conduction band edge (E{sub c}). Of these ten levels, three traps at 0.69, 0.73, and 1.03 eV below E{sub c}, respectively, are observed only after proton implantation. Dose dependence and depth profiling studies of these levels have been performed. Comparing the experimental data with computer simulations of the implantation and defects profiles, it is suggested that these three new levels, not previously reported in the literature, are hydrogen related. In particular, the E{sub c}-0.73 eV level displays a very narrow depth distribution, confined within the implantation profile, and it originates most likely from a defect involving only one H atom.

• OSTI ID: 20714151
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 11; Other Information: DOI: 10.1063/1.2139831; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COMPUTERIZED SIMULATION
DEEP LEVEL TRANSIENT SPECTROSCOPY
DOPED MATERIALS
ELECTRON BEAMS
EPITAXY
EV RANGE 01-10
HYDROGEN
ION IMPLANTATION
IRRADIATION
MEV RANGE 01-10
MEV RANGE 10-100
NITROGEN
PROTONS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SPATIAL DISTRIBUTION
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K