Deep levels induced by reactive ion etching in n- and p-type 4H-SiC

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3460636· OSTI ID:21476351

Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu ^[1]; Krieger, Michael ^[2]

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1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510 (Japan)
2. Lehrstuhl fuer Angewandte Physik, Universitaet Erlangen- Nuernberg, Staudtstr. 7/A3, D-91058 Erlangen (Germany)

In this study, the authors investigate deep levels, which are induced by reactive ion etching (RIE) of n-type/p-type 4H-SiC, by deep level transient spectroscopy (DLTS). The capacitance of a Schottky contact fabricated on as-etched p-type SiC is abnormally small due to compensation or deactivation of acceptors extending to a depth of {approx}14 {mu}m, which is nearly equal to the epilayer thickness. The value of the capacitance can recover to that of a Schottky contact on as-grown samples after annealing at 1000 deg. C. However, various kinds of defects, IN2 (E{sub C}-0.30 eV), EN (E{sub C}-1.6 eV), IP1 (E{sub V}+0.30 eV), IP2 (E{sub V}+0.39 eV), IP4 (HK0: E{sub V}+0.72 eV), IP5 (E{sub V}+0.85 eV), IP7 (E{sub V}+1.3 eV), and EP (E{sub V}+1.4 eV), remain at a high concentration (average of total defect concentration in the region ranging from 0.3 {mu}m to 1.0 {mu}m:{approx}5x10{sup 14} cm{sup -3}) even after annealing at 1000 deg. C. The concentration of all these defects generated by RIE, except for the IP4 (HK0) center, remarkably decreases by thermal oxidation. In addition, the HK0 center can also be reduced significantly by a subsequent annealing at 1400 deg. C in Ar.

• OSTI ID: 21476351
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 2; Other Information: DOI: 10.1063/1.3460636; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANNEALING
CAPACITANCE
CRYSTAL GROWTH
DEACTIVATION
DEEP LEVEL TRANSIENT SPECTROSCOPY
EPITAXY
ETCHING
EV RANGE
LAYERS
NICKEL
NITROGEN
OXIDATION
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SPUTTERING
TITANIUM
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
MATERIALS
METALS
NONMETALS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE FINISHING
TRANSITION ELEMENTS