Electrical and structural changes in the near surface of reactively ion etched InP

Journal Article · Mon Oct 16 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102221· OSTI ID:5489990

Pearton, S J; Chakrabarti, U K; Baiocchi, F A ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

Near-surface ({similar to}1000 A) modification in the net carrier concentration in {ital n}-type InP ({ital n}=6{times}10{sup 15}--1.5{times}10{sup 17} cm{sup {minus}3}) was observed after reactive ion etching (RIE) in Cl-based (CCl{sub 2}F{sub 2}/O{sub 2}) or organic-based (C{sub 2}H{sub 6}/H{sub 2}) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near-complete recovery of the initial carrier density occurs after annealing at 500 {degree}C for 30 s. Structural disorder is detected by ion channeling to depths of {similar to}400 A after C{sub 2}H{sub 6}/H{sub 2} RIE with a self-bias of 380 V. This disorder shows significant recovery after 400 {degree}C, 30 s annealing. Current-voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C{sub 2}H{sub 6}/H{sub 2} discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl{sub 2}F{sub 2}/O{sub 2} etched material show only a slight increase in reverse current compared to unetched control samples.

• OSTI ID: 5489990
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:16; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BEAMS
CARRIER DENSITY
CHARGE CARRIERS
COLLISIONS
ELECTRIC DISCHARGES
ELECTRONIC STRUCTURE
ETCHING
FABRICATION
HEAT TREATMENTS
HIGH TEMPERATURE
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION BEAMS
ION COLLISIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE FINISHING