Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
- Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
The authors have investigated deep levels in as-grown and electron-irradiated p-type 4H-SiC epilayers by deep level transient spectroscopy. In as-grown epilayers, the D center and four deep levels are observed. In p-type 4H-SiC, reactive ion etching followed by thermal treatment (at 1150 degree sign C) induces the HK0 (E{sub V}+0.79 eV) and HK2 (E{sub V}+0.84 eV) centers. By the electron irradiation, two deep levels at 0.98 eV (EP1) and 1.44 eV (EP2) are observed in all the samples irradiated at 116-400 keV, while two additional deep levels (EP3 and EP4) are observed only in the samples irradiated at 400 keV. After annealing at 950 degree sign C, these centers are annealed out, and the HK4 (E{sub V}+1.44 eV) concentration is increased. By the electron irradiation at more than 160 keV followed by annealing at 950 degree sign C, three deep levels are always observed at 0.30 eV (UK1), 0.58 eV (UK2), and 1.44 eV (HK4). These centers may be defect complexes including carbon displacement-related defects. All the centers except for the D center are reduced to below the detection limit (1-3x10{sup 11} cm{sup -3}) by annealing at 1550 degree sign C for 30 min.
- OSTI ID:
- 20982896
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 10; Other Information: DOI: 10.1063/1.2730569; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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