Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
- Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
Deep levels in n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS). The Z{sub 1/2} and EH{sub 6/7} centers are dominant in as-grown samples. After electron irradiation at 116 keV, by which only carbon atoms may be displaced, the Z{sub 1/2} and EH{sub 6/7} concentrations are significantly increased. The Z{sub 1/2} and EH{sub 6/7} centers are stable up to 1500-1600 deg. C and their concentrations are decreased by annealing at 1600-1700 deg. C. In the irradiated samples, the trap concentrations of the Z{sub 1/2} and EH{sub 6/7} centers are increased with the 0.7 power of the electron fluence. The concentrations of the Z{sub 1/2} and EH{sub 6/7} centers are very close to each other in all kinds of samples, as-grown, as-irradiated, and annealed ones, even though the condition of growth, irradiation (energy and fluence), and annealing has been changed. This result suggests that both Z{sub 1/2} and EH{sub 6/7} centers microscopically contain the same defect such as a carbon vacancy.
- OSTI ID:
- 20884918
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 11; Other Information: DOI: 10.1063/1.2401658; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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