Mechanisms of transition-metal gettering in silicon

Journal Article · Sun Oct 01 00:00:00 EDT 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1289273· OSTI ID:20217673

Myers, S M ^[1]; Seibt, M ^[2]; Schroeter, W ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico, 87185-1056 (United States)
2. IV. Physikalisches Institut der Universitaet Goettingen, Bunsenstrasse 13-15, D-37073 Goettingen, (Germany)

The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered. (c) 2000 American Institute of Physics.

• OSTI ID: 20217673
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 88; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
DOPED MATERIALS
GETTERING
PHOSPHORUS
PRECIPITATION
SEGREGATION
SILICON
THERMODYNAMICS
TRANSITION ELEMENTS