Mechanisms of transition-metal gettering in silicon
Journal Article
·
· Journal of Applied Physics
- Sandia National Laboratories
The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed from a mechanistic perspective. Methods for mathematical modeling of gettering are reviewed and illustrated. Needs for further research are discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 753385
- Report Number(s):
- SAND2000-0762J
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics
- Country of Publication:
- United States
- Language:
- English
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