Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages

Journal Article · Mon May 15 00:00:00 EDT 2000 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.84.4645· OSTI ID:20216593

Qin, X R ^[1]; Swartzentruber, B S ^[2]; Lagally, M G ^[1]

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1. University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-1413 (United States)

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions. (c) 2000 The American Physical Society.

• OSTI ID: 20216593
• Journal Information: Physical Review Letters, Vol. 84, Issue 20; Other Information: PBD: 15 May 2000; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
GERMANIUM
LAYERS
ELECTRON MICROSCOPY
MIXING
INTERFACES
THIN FILMS
GROWTH
EXPERIMENTAL DATA