Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages
Journal Article
·
· Physical Review Letters
The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 751231
- Report Number(s):
- SAND2000-0373J; TRN: AH200019%%44
- Journal Information:
- Physical Review Letters, Other Information: Submitted to Physical Review Letters; PBD: 8 Feb 2000
- Country of Publication:
- United States
- Language:
- English
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