View of the empty states of the Si(100)-(2{times}1) surface via scanning tunneling microscopy imaging at very low biases

Journal Article · Sun Feb 28 23:00:00 EST 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.59.7293· OSTI ID:321980

Qin, X R; Lagally, M G ^[1]

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1. University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

It is shown that the use of very-low-bias voltages in scanning tunneling microscopy of the Si(100)-2{times}1 surface achieves significantly greater sensitivity to the electronic states of the top atomic layer than does the use of typical larger bias voltages. Measurements with the increased sensitivity demonstrate that the conventional interpretation of empty-state images of Si(100) is inadequate. New spectroscopic assignments for observed features are proposed. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 321980
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 11 Vol. 59; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONIC STRUCTURE
IMAGES
SCANNING ELECTRON MICROSCOPY
SILICON
SURFACES