Fluorine-doped tin dioxide thin films prepared by radio-frequency magnetron sputtering

Journal Article · Sun Dec 31 23:00:00 EST 1995 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836423· OSTI ID:201409

Maruyama, Toshiro; Akagi, Hisao ^[1]

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1. Kyoto Univ. (Japan). Dept. of Chemical Engineering

Tin dioxide thin films doped with fluorine were prepared by using a radio-frequency (RF) magnetron sputtering method. The target was SnO{sub 2} powder mixed with either SnF{sub 2} or SnF{sub 4} powder. The deposition conditions for obtaining films of low resistivity and their physical characteristics were systematically studied. The crystallinity, which was inferior to that of the CVD prepared film, was not improved by increasing substrate temperature, decreasing total pressure, and decreasing RF power. These changes in deposition conditions decreased the fluorine content of the film and consequently decreased carrier concentration.

• Sponsoring Organization: USDOE
• OSTI ID: 201409
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
DOPED MATERIALS
ELECTRICAL PROPERTIES
FLUORINE ADDITIONS
N-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SPUTTERING
TIN FLUORIDES
TIN OXIDES
VAPOR DEPOSITED COATINGS