The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples
Conference
·
OSTI ID:20104716
Thermal admittance spectroscopy was used to characterize the shallow dopants in chemical vapor deposition (CVD) grown thin films and in sublimation sandwich method (SSM) grown 4H-SiC layers. The values of the activation energy levels of E{sub c}-0.054 eV for Nitrogen at the hexagonal site and of E{sub c}-0.10 eV for Nitrogen at the cubic site were indices of comparison. The net carrier concentrations (N{sub D}-N{sub V}) of the films were determined by capacitance-voltage measurements. The net carrier concentrations for the SSM films ranged from 2 x 10{sup 17} to 7 x 10{sup 17} cm{sup {minus}3}. The two Nitrogen levels were observed in the CVD films. Hopping conduction with an activation energy of E{sub c}-0.0058 eV was observed in one SSM sample having N{sub D}-N{sub V} = 7 x 10{sup 17} cm{sup {minus}3}.
- Research Organization:
- Univ. of Dayton, OH (US)
- OSTI ID:
- 20104716
- Country of Publication:
- United States
- Language:
- English
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