The electrical properties of in-situ doped polycrystalline silicon thin films grown by electron cyclotron resonance chemical vapor deposition at 250 C
Conference
·
OSTI ID:20015572
The phosphorus doped polycrystalline silicon thin films were grown by Electron cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) at 250 C. The doping gas PH{sub 3} was in-situ added with SiH{sub 4} gas during the films deposition. All films were deposited with 90% hydrogen dilution ratio. The resistivity of the films is varied from 0.2 to 7 {Omega}-cm and decrease as the PH{sub 3}/SiH{sub 4} gas ratio increase from (3/100 to 7/100). From the SIMS data, the doping concentration is all about 10{sup 20} cm{sup {minus}3}. The activation energy is decreased from 0.35 eV to 0.12 eV as the dopant concentration increased from 0.8 x 10{sup 20} cm{sup {minus}3} to 4.7 x 10{sup 20} cm{sup {minus}3}. From the Hall measurements, the carrier mobility is about 2{approximately}4 cm{sup 2}/V.sec, and the carrier concentration is the 0.5{approximately}1{degree} of the dopant concentration. The gain boundary trap density predicted by the trapping model is about 4 x 10{sup 13} cm{sup {minus}2}.
- Research Organization:
- National Chung Hsing Univ., Taichung (TW)
- OSTI ID:
- 20015572
- Country of Publication:
- United States
- Language:
- English
Similar Records
Doping studies of n- and p-type Al{sub x}Ga{sub 1{minus}x}N grown by ECR assisted MBE
Fermi level position and density of states of intrinsic, phosphorus-doped, and boron-doped a-Si:H deposited on stainless steel
The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples
Book
·
Tue Dec 30 23:00:00 EST 1997
·
OSTI ID:581010
Fermi level position and density of states of intrinsic, phosphorus-doped, and boron-doped a-Si:H deposited on stainless steel
Journal Article
·
Thu Mar 31 23:00:00 EST 1983
· J. Vac. Sci. Technol., A; (United States)
·
OSTI ID:5784496
The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples
Conference
·
Thu Jul 01 00:00:00 EDT 1999
·
OSTI ID:20104716