Deep centers and persistent photoconductivity studies in variously grown GaN films
Conference
·
OSTI ID:20104639
- and others
Deep levels studies on a set of n-GaN films grown by MOCVD and HVPE reveal the presence of electron traps with levels near E{sub c}-0.25 eV, E{sub c}-0.55 eV, E{sub c}-0.8 eV, E{sub c}-1 eV, hole traps with levels near E{sub v}+0.9 eV and a band of relatively shallow states in the lower half of the bandgap. The total density of these latter states was estimated to be some 10{sup 16} cm{sup {minus}3} and they were tentatively associated with dislocations in GaN based on their high concentration and band-like character. None of the electron or hole traps could be unambiguously related with strong changes of diffusion lengths of minority carriers in various samples. It is proposed that such changes occur due to different surface recombination velocities. An important role of E{sub c}-0.55 eV traps in persistent photoconductivity phenomena in n-GaN has been demonstrated.
- Research Organization:
- Inst. of Rare Metals, Moscow (RU)
- OSTI ID:
- 20104639
- Country of Publication:
- United States
- Language:
- English
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