Photocapacitance and hole drift mobility measurements in hydrogenated amorphous silicon (a-Si:H)

Conference · Tue Jul 01 00:00:00 EDT 1997

OSTI ID:20085555

Nurdjaja, I; Schiff, E A

The authors present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

• Research Organization: Syracuse Univ., NY (US)
• OSTI ID: 20085555
• Resource Relation: Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
SCHOTTKY BARRIER SOLAR CELLS
CAPACITANCE
HOLES
CARRIER MOBILITY
AMORPHOUS STATE
HYDROGEN ADDITIONS