Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon
We have applied transient photocapacitance and transient junction photocurrent measurements to the study of undoped hydrogenated amorphous silicon (a-Si:H) films, and find that the electronic optical transition from the dominant deep defect is very similar in energy to the D/sup -/..-->..D/sup 0/+e optical transition identified in n-type doped a:Si:H films. In addition, we have observed a competing hole thermal transition, and we have obtained estimates of its thermal emission rate and of the thermal gap. We have used the difference between photocapacitance and photocurrent in the valence-band tail region to determine the quantity (..mu..tau)/sub h/N/sub T/ at different temperatures. Finally, we have observed that light-induced metastable defects have a hole capture cross section significantly larger than that of the intrinsic defects.
- Research Organization:
- University of Oregon, Eugene, Oregon 97403
- OSTI ID:
- 7201239
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 53:5
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
ELECTRONIC STRUCTURE
PHOTOCURRENTS
TRAPPING
CAPACITANCE
CRYSTAL DEFECTS
ENERGY GAP
EXPERIMENTAL DATA
HYDROGENATION
MEDIUM TEMPERATURE
P-N JUNCTIONS
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
INFORMATION
JUNCTIONS
NUMERICAL DATA
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
360603* - Materials- Properties