Growth mechanism of hydrogen clusters
It is demonstrated that the exposure of polycrystalline silicon (poly-Si) to monatomic hydrogen results in the formation of H clusters. These H stabilized platelets appear in the near-surface region (100 nm) and are predominantly oriented along {l_brace}111{r_brace} crystallographic planes. Platelet concentrations of {approx}5 x 10{sup 15}, 1.5 x 10{sup 16} -cm{sup {minus}3}, and 2.4 x 10{sup 17} cm{sup {minus}3} were observed in nominally undoped poly-Si, phosphorous doped poly-Si (P = 10{sup 17} cm{sup {minus}3}), and phosphorous doped single crystal silicon (P > 3 x 10{sup 18} cm{sup {minus}3}), respectively. Results obtained on doped c-Si demonstrate that platelet generation occurs only at Fermi-level positions of E{sub C} - E{sub F} < 0.4 eV.
- Research Organization:
- Hahn-Meitner-Inst. Berlin (DE)
- OSTI ID:
- 20085476
- Country of Publication:
- United States
- Language:
- English
Similar Records
Hydrogen migration in phosphorous doped polycrystalline silicon
Low-temperature deposition pathways to silicon nitride, amorphous silicon, polycrystalline silicon, and n type amorphous silicon films using a high density plasma system