Infrared spectroscopy of sub-surface defects induced by remote hydrogen plasma exposure of silicon (100)
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Chemical Engineering
Infrared multiple internal reflection (MIR) spectroscopy was used to investigate the local chemical bonding in sub-surface defects induced by remote hydrogen plasma exposure (RHPE) of Si(100) wafers. Exposure of very lightly doped n-type Si ([P] = 5 {times} 10{sup 13} cm{sup {minus}3}) to a remote hydrogen plasma for 2 min at 200 C results in the formation of Si monohydride species. An intense narrow band at 2078 cm{sup {minus}1} (FWHM = 7 cm{sup {minus}1}) and a small shoulder at 2065 cm{sup {minus}1} are observed. The data are consistent with monohydride termination of Si{l_brace}111{r_brace} platelet defects with a weak interaction between H atoms on opposing internal surfaces. In contrast, platelet nucleation at 200 C followed by growth at 300 C selectively generates Si dihydride species, as evidenced by a single broad infrared band at 2109 cm{sup {minus}1}. The P concentration was found to have a marked influence on the areal density and chemical bonding of sub-surface hydrogen. The MIR spectrum of lightly doped Si ([P] = 2 {times} 10{sup 14} cm{sup {minus}3}) after RHPE at 200 C contains broad peaks at 2078 and 2130 cm{sup {minus}1} consistent with Si monohydride and trihydride species. The authors infer that hydrogen saturates broken bonds along Si{l_brace}111{r_brace} Type 1 glide planes (one bond per Si atom) and along Si{l_brace}111{r_brace} Type II glide planes (three bonds per Si atom). The Si-H peak area indicates a H areal density {approximately}2 times higher than in very lightly doped Si.
- OSTI ID:
- 308127
- Report Number(s):
- CONF-980405--
- Country of Publication:
- United States
- Language:
- English
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