Study of extended-defect formation in Ge and Si after H ion implantation

Journal Article · Mon May 02 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1906319· OSTI ID:20702316

Akatsu, T; Bourdelle, K K; Richtarch, C; Faure, B; Letertre, F ^[1]

---

1. SOITEC, Parc Technologique des Fontaines, Bernin 38926 Crolles Cedex (France)

Extended defects formed after hydrogen implantation into Si and Ge (100) substrates and subsequent thermal anneals were investigated by transmission electron microscopy. The majority of the extended defects formed in both materials were platelet-like structures lying on {l_brace}100{r_brace} and {l_brace}111{r_brace} planes. We found {l_brace}100{r_brace} platelets not only parallel but also perpendicular to the surface. In Ge wafers, high density of {l_brace}311{r_brace} defects and nanobubbles with the average size of 2 nm were observed. The difference between two materials can be attributed to the weaker strength of Ge-H bond.

• OSTI ID: 20702316
• Journal Information: Applied Physics Letters, Vol. 86, Issue 18; Other Information: DOI: 10.1063/1.1906319; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL BONDS
CRYSTAL DEFECTS
GERMANIUM
HYDROGEN IONS
ION IMPLANTATION
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY