Low-temperature deposition pathways to silicon nitride, amorphous silicon, polycrystalline silicon, and n type amorphous silicon films using a high density plasma system

Conference · Wed Dec 31 04:00:00 EST 1997

OSTI ID:338497

Bae, S; Farber, D; Kalkan, A; Fonash, S ^[1]

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1. Pennsylvania State Univ., University Park, PA (United States). Electronic Materials and Processing Research Lab.

The authors report on the low temperature deposition approach to silicon nitride, amorphous silicon (a-Si) and polycrystalline silicon (poly-Si), and doped a-Si films using an electron cyclotron resonance PECVD system. They find that silicon nitride films, deposited at temperatures as low as 30 C, can be obtained with {approximately}7 {times} 10{sup {minus}9} A/cm{sup 2}/ leakage currents, flat band voltages of {approximately}0.6 V, and breakdown field strengths of {approximately}6 MV/cm. In the case of the a-Si and poly-Si films, they employ X-ray diffraction, UV reflectance, photoluminescence, and electrical conductivity for evaluation. They find that a-Si films, deposited in the 30--120 C temperature range, can be obtained with a photo-sensitivity (I{sub photo}/I{sub dark}) of {approximately}10{sup 4} under AM1 light and that they can also produce polycrystalline films at temperatures as low as 120 C on glass and polyethersulfone substrates. In the case of doped materials, conductivities of 10{sup {minus}3}--10{sup {minus}2} S/cm can be obtained for the as-deposited layers grown at temperatures as low as 40 C.

• OSTI ID: 338497
• Report Number(s): CONF-970559--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
N-TYPE CONDUCTORS
PLASMA DENSITY
SILICON
SILICON NITRIDES