High voltage ionization during plasma immersion ion implantation

Conference · Thu Jul 01 04:00:00 EDT 1999

OSTI ID:20067621

Tian, X B; Zeng, Z M; Kwok, T K; Tang, B Y; Chu, P K

During the plasma immersion ion implantation (PIII) process, ions are typically created by an external plasma source, such as electron impact glow discharge using hot filaments, radio frequency, electron cyclotron resonance, metal arc, and so on. There is, however, a less obvious ion formation mechanism by the high voltage itself, especially for a long pulse duration or at high working pressure, as shown by the implantation current not decreasing monotonically as predicted by the Child-Langmuir law. A proof of this secondary phenomenon is that the measured total current sometimes increases dramatically in a low vacuum sustained by RF glow discharge. Another example is that the current can gradually rise after a short delay during long pulse, hot filament glow discharge PIII. These phenomena can be attributed to high voltage ionization during the PIII process and are related to the gas pressure, high voltage pulse duration, target size, target materials, and so on. In this paper, the authors will present supporting experimental data in addition to a theoretical analysis.

• Research Organization: City Univ. of Hong Kong, Kowloon (HK); Harbin Inst. of Tech. (CN)
• OSTI ID: 20067621
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
36 MATERIALS SCIENCE
GLOW DISCHARGES
ION IMPLANTATION
IONIZATION
MATERIALS
PERFORMANCE
PLASMA PRODUCTION