Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

Conference · Sat Jun 01 04:00:00 EDT 1996

OSTI ID:379041

Wengrow, A B; Leung, K N; Perkins, L T; Pickard, D S; Rickard, M; Williams, M D ^[1]; Tucker, M ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. Spectrum Sciences, Inc., Santa Clara, CA (United States)

The multicusp ion source can produce large volumes of uniform, quiescent, high density plasmas. A plasma chamber suited for plasma immersion ion implantation (PIII) was readily made. Conventional PIII pulses the bias voltage applied to the substrate which is immersed in a CW mode plasma. Here, a method by which the plasma itself is pulsed was developed. Typically pulse lengths of 500 {mu}s are used and are much shorter than that of the substrate voltage pulse (5-15 ms). This approach, together with low gas pressures and low bias voltages, permits the constant energy implantation of an entire wafer simultaneously without glow discharge. Results show that this process can yield implant currents of up to 2.5 mA/cm{sup 2}; thus very short implant times can be achieved. Uniformity of the ion flux is also discussed. As this method can be scaled to any dimension, it can be made to handle any size wafer.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 379041
• Report Number(s): LBL--38196; CONF-9606110--6; ON: DE96013725; CRN: C/LBL--BG-94-121.00
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPE AND RADIATION SOURCES
42 ENGINEERING
66 PHYSICS
ION IMPLANTATION
ION SOURCES
SEMICONDUCTOR DEVICES