Particle-in-cell and TAMIX simulation of the hydrogen plasma immersion ion implantation ion-cut process
Silicon-on insulator (SOI) is an attractive material compared with bulk silicon substrate for high speed, low power, low voltage complementary metal oxide semiconductor (CMOS) integrated circuits. A bond-cut process, commercially referred to as Smart-Cut{trademark} developed by SOITEC, has provided excellent SOI wafers. One of the critical steps of Smart-Cut is to implant a fairly high dose of hydrogen into the wafer to form a plane along which the wafer can crack. Conventional beam-line ion implantation can be replaced by plasma immersion ion implantation (PIII) to achieve a higher throughput and lower cost. For hydrogen PIII/bond-cut, the coexistence of H{sup +}, H{sub 2}{sup +}, and H{sub 3}{sup +} in the plasma tends to spread the implanted hydrogen profile that cracking may not occur uniformly. Hydrogen plasma immersion ion implantation (PIII) into a 200 mm diameter silicon wafer placed on top of a cylindrical stage has been numerically simulated by the particle-in-cell (PIC) method. The plasma consists of three hydrogen species H{sup +}, H{sub 2}{sup +} and H{sub 3}{sup +} in different ratio. The retained dose and sputtering loss are calculated by TAMIX. The highest retained dose is found for the H{sup +} ion whereas half of the hydrogen atoms are not retained when H{sub 3}{sup +} is implanted. The combined effect of the three species show a maximum non-uniformity in the retained dose of 11.5% along the radial distance. The depth profile is shallower at the edge, but within a 6.375 cm radius, the depth profile is fairly uniform with the difference less than 5%.
- Research Organization:
- City Univ. of Hong Kong, Kowloon (HK)
- OSTI ID:
- 20034303
- Resource Relation:
- Conference: 1999 IEEE International Conference on Plasma Science, Monterey, CA (US), 06/20/1999--06/24/1999; Other Information: PBD: 1999; Related Information: In: The 26th IEEE international conference on plasma science, 342 pages.
- Country of Publication:
- United States
- Language:
- English
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