A high voltage pulser R and D for plasma immersion ion implantation applications
- Computer Network Communications, Inc., Crown Point, IN (United States)
- Purdue Univ., Hammond, IN (United States). Dept. of Material Science
- National Inst. for Space Research, Sao Paulo (Brazil). Associated Plasma Lab.
Plasma Immersion Ion Implantation (PIII) is a technology used to modify the material surface properties of a variety of products, e.g., for the manufacturing of semiconductor junctions and oxides, and for the production of high-strength, light-weight corrosion-resistant aerospace components. PIII applies a series of negative high-voltage pulses to a sample (target) immersed in plasma. High-Voltage Pulse Generator was built in a circuit category of Pulse Forming Network (PFN), consisting of 10 LC sections with L = 100 {micro}H, C = 2.5 nF and metglas core high-voltage pulse transformer. The instrument was designed to produce an adjustable, several amperes, flat 100 kV pulse with 10 {micro}s duration and pulse repetition frequency (PRF) from 50 Hz to 7 kHz. The generator is fed with sine wave, constant high current source, and 20 kV, 3 A switching power supply. Experimental results are presented for: (1) the shapes of voltage and current pulses of the PIII reactor; (2) current-voltage dependence of the PIII reactor at constant plasma RF ignition. Both characteristics obtained show that the High-Voltage Pulse Generator can be successfully used in various technological processes which utilize PIII. The important advantage of the high-voltage pulser design to similar devices is its small geometrical size of approximately 1 m{sup 3}. The results obtained lead to determination of nomograms for important technological parameters such as the time of irradiation, absorbed ion dose on the sample surface.
- OSTI ID:
- 346847
- Report Number(s):
- CONF-980601--
- Country of Publication:
- United States
- Language:
- English
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