Plasma Immersion Ion Implantation with a 4kV/10kHz Compact High Voltage Pulser

Journal Article · Mon Nov 13 00:00:00 EST 2006 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2401503· OSTI ID:20891823

Ueda, M; Oliveira, R M; Rossi, J O ^[1]; Reuther, H ^[2]; Silva, G ^[1]

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1. Associated Laboratory of Plasma, National Institute for Space Research, Av. dos Astronautas 1758, Sao Jose dos Campos, Sao Paulo (Brazil)
2. Institute of Ion Beam Physics and Materials Research, Rossendorf, Dresden (Germany)

Development of a 4 kV/10 kHz Compact High Voltage Pulser and its application to nitrogen plasma immersion ion implantation (PIII) of different materials as Si, Al alloys, SS304 stainless steel and Ti alloys are discussed. Low voltage (1-5 kV) pulses at high frequencies (up to 20 kHz for 2 kV) were obtained with maximum power delivered at 5 kV, 7 kHz. These conditions were not sufficient to reach temperatures above 200 deg. C in the samples because of short duration of the pulses. However, very shallow implantations of nitrogen in Si, Al5052, SS304 were observed by Auger electron spectroscopy and improved corrosion resistance was obtained for Al5052 when it was treated by nitrogen PIII at 2.5 kV, 5{mu}s and 5 kHz pulses.

• OSTI ID: 20891823
• Journal Information: AIP Conference Proceedings, Vol. 866, Issue 1; Conference: IIT 2006: 16. international conference on ion implantation technology, Marseille (France), 11-16 Jun 2006; Other Information: DOI: 10.1063/1.2401503; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ALLOYS
AUGER ELECTRON SPECTROSCOPY
CORROSION RESISTANCE
DEPOSITION
ELECTRIC POTENTIAL
ION IMPLANTATION
KHZ RANGE 01-100
NITROGEN
PLASMA
SILICON ALLOYS
STAINLESS STEEL-304
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TITANIUM ALLOYS