Growth and structure of Ti{sub 2}O{sub 3} and TiO{sub 2} thin films on (0001) {alpha}-Al{sub 2}O{sub 3} substrates
Titanium oxide thin films were grown at different temperatures on (0001) {alpha}-Al{sub 2}O{sub 3} substrates by molecular beam epitaxy (MBE). The films grown at room temperature were amorphous. Annealing at 1,223 K of 6 nm thick films led to the formation of TiO{sub 2} with an epitaxial orientation relationship (100)<001>TiO{sub 2} {parallel} (0001)<0l{bar 1}0>Al{sub 2}O{sub 3} with the substrate. However, on similar heat treatment, thicker 100 nm films formed polycrystalline TiO{sub 2}. At a deposition temperature of 1,223 K epitaxial Ti{sub 2}O{sub 3} films with orientation relationship (0001) <2{bar 1}{bar 1}0>Ti{sub 2}O{sub 3} {parallel} (0001)<2{bar 1}{bar 1}0>Al{sub 2}O{sub 3} were formed. The lattice mismatch between Ti{sub 2}O{sub 3} and {alpha}-Al{sub 2}O{sub 3} was accommodated by a regular arrangement of misfit dislocations at the Ti{sub 2}O{sub 3}/{alpha}-Al{sub 2}O{sub 3} interface. By comparing the microstructural evolution of the annealed films with that of those films grown at high temperature, mechanisms governing grain growth in polycrystalline titanium oxide films were discussed.
- Research Organization:
- Max-Planck-Inst. fuer Metallforschung, Stuttgart (DE)
- OSTI ID:
- 20015529
- Resource Relation:
- Conference: Polycrystalline thin films - Structure, Texture, Properties and Applications III, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: Single article reprints from this publication are available through University Microfilms Inc., 300 North Zeeb Road, Ann Arbor, MI 48106; PBD: 1997; Related Information: In: Polycrystalline thin films -- Structure, texture, properties and applications III. Materials Research Society symposium proceedings: Volume 472, by Yalisove, S.M.; Adams, B.L.; Im, J.S.; Zhu, Y.; Chen, F.R. [eds.], 489 pages.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth of Ti thin films on sapphire substrates
HREM study of heteroepitaxial interfaces in the TiO sub 2 /Al sub 2 O sub 3 system