Structure and chemistry of Ti overlayers on {alpha}-Al{sub 2}O{sub 3}(0001)
Conference
·
OSTI ID:20015538
Ti thin films were grown by molecular-beam epitaxy (MBE) on {alpha}-Al{sub 2}O{sub 3}(0001) substrates. During room temperature deposition, in the very initial growth stage, AES investigations revealed a chemical reaction between the Ti and the {alpha}-Al{sub 2}O{sub 3} substrate. An analysis of the AES data based on simple assumptions showed that {approximately}2 monolayers of Ti are oxidized. However, HRTEM analysis indicated an atomically smooth, incoherent interface, without a reaction layer. Reflection high-energy electron diffraction (RHEED) analysis revealed an epitaxial orientation relationship (0001)2{bar 1}{bar 1}0> Ti {parallel} (0001)<10{bar 1}0>Al{sub 2}O{sub 3} between Ti and {alpha}-Al{sub 2}O{sub 3} between Ti and {alpha}-Al{sub 2}O{sub 3}(0001).
- Research Organization:
- Max-Planck-Inst. fuer Metallforschung, Stuttgart (DE)
- OSTI ID:
- 20015538
- Country of Publication:
- United States
- Language:
- English
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