Growth and structure of Ti{sub 2}O{sub 3} and TiO{sub 2} thin films on (0001) {alpha}-Al{sub 2}O{sub 3} substrates

Conference · Tue Jul 01 04:00:00 EDT 1997

OSTI ID:20015529

Wagner, T; Agarwal, M

Titanium oxide thin films were grown at different temperatures on (0001) {alpha}-Al{sub 2}O{sub 3} substrates by molecular beam epitaxy (MBE). The films grown at room temperature were amorphous. Annealing at 1,223 K of 6 nm thick films led to the formation of TiO{sub 2} with an epitaxial orientation relationship (100)<001>TiO{sub 2} {parallel} (0001)<0l{bar 1}0>Al{sub 2}O{sub 3} with the substrate. However, on similar heat treatment, thicker 100 nm films formed polycrystalline TiO{sub 2}. At a deposition temperature of 1,223 K epitaxial Ti{sub 2}O{sub 3} films with orientation relationship (0001) <2{bar 1}{bar 1}0>Ti{sub 2}O{sub 3} {parallel} (0001)<2{bar 1}{bar 1}0>Al{sub 2}O{sub 3} were formed. The lattice mismatch between Ti{sub 2}O{sub 3} and {alpha}-Al{sub 2}O{sub 3} was accommodated by a regular arrangement of misfit dislocations at the Ti{sub 2}O{sub 3}/{alpha}-Al{sub 2}O{sub 3} interface. By comparing the microstructural evolution of the annealed films with that of those films grown at high temperature, mechanisms governing grain growth in polycrystalline titanium oxide films were discussed.

• Research Organization: Max-Planck-Inst. fuer Metallforschung, Stuttgart (DE)
• OSTI ID: 20015529
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANNEALING
DATA
MICROSCOPY
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
SUBSTRATES
THIN FILMS
TITANIUM OXIDES