Growth of Ti thin films on sapphire substrates
- Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Titanium thin films have been grown by electron-beam physical vapor deposition on the (0001) surface of sapphire (single crystal {alpha}-Al{sub 2}O{sub 3}) substrates at growth temperatures ranging from 295 to 1223 K. Single phase {alpha}-Ti films grew at all growth temperatures, even at 1223 K which is above the {alpha}{endash}{beta}-transition temperature of Ti. Crystal quality, as measured by the width of x-ray rocking curves, was found to improve, and the elastic strain to increase, as the growth temperature increased from 295 K to 1023 K. The epitaxial relationship between the Ti and sapphire was (0002){sub Ti}{parallel}(0006){sub Al{sub 2}O{sub 3}} and [11{bar 2}0]{sub Ti}{parallel}[10{bar 1}0]{sub Al{sub 2}O{sub 3}}. The extent of interdiffusion across the Ti/Al{sub 2}O{sub 3} interface was observed to be small ({lt}20 nm) at all growth temperatures. {copyright} {ital 1997 Materials Research Society.}
- OSTI ID:
- 528007
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 7 Vol. 12; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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