Magnetoelectric inverter

Patent · Tue May 23 00:00:00 EDT 2023

OSTI ID:1998393

Gaul, Nishtha Sharma; Marshall, Andrew; Dowben, Peter A.; Nikonov, Dmitri E.

A magneto-electric (ME) inverter includes two anti-ferromagnetic spin orbit read (AFSOR) circuit elements, each AFSOR circuit element has a CMOS inverter; and an AFSOR device with a ME base layer; a semiconductor channel layer on the ME base layer and comprising a source terminal and a drain terminal, where the source terminal is coupled to an output of the CMOS inverter; and a gate electrode on the semiconductor channel layer. The gate electrode of a second AFSOR device of the two AFSOR circuit elements is coupled to the drain terminal of a first AFSOR device of the two AFSOR circuit elements.

• Research Organization: Univ. of Nebraska, Lincoln, NE (United States); Intel Corporation, Santa Clara, CA (United States); Univ. of Texas, Austin, TX (United States)
• Sponsoring Organization: USDOE; Defense Advanced Research Projects Agency (DARPA); National Science Foundation (NSF); National Institute of Standards and Technology (NIST)
• Assignee: Board of Regents of the University of Nebraska (Lincoln, NE); Intel Corporation (Santa Clara, CA); The Board of Regents of The University of Texas System (Austin, TX)
• Patent Number(s): 11,658,663
• Application Number: 17/827,747
• OSTI ID: 1998393
• Country of Publication: United States
• Language: English