Applications of Strain-Coupled Magnetoelectric Composites

Pradhan, Dhiren K.; Kumari, Shalini; Rack, Philip D.; Kumar, Ashok

doi:10.1016/b978-0-12-815732-9.00048-6

Applications of Strain-Coupled Magnetoelectric Composites

Journal Article · Mon Nov 01 00:00:00 EDT 2021 · Encyclopedia of Smart Materials

DOI:https://doi.org/10.1016/b978-0-12-815732-9.00048-6· OSTI ID:1867231

Pradhan, Dhiren K. ^[1]; Kumari, Shalini ^[2]; Rack, Philip D. ^[3]; Kumar, Ashok ^[4]

Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Louisiana State University and A&M College
Pennsylvania State Univ., University Park, PA (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
National Physical Laboratory (CSIR), New Delhi (India)

This article deals with research, development and future directions of magnetoelectric composites for practical devices applications. In the past 20 years there has been a surge of research in the area of multiferroics (MF) and magnetoelectrics (ME) due to their potential to replace existing technologies based only on ferroelectric or ferromagnetic materials. Some of the magnetoelectric composites show exceptionally high potential in the area of magnetic field sensors, however, work remains before commercialization can be realized. The cross coupling among various ferroic parameters in magnetoelectric composites is several orders higher than single phase magetoelectrics, which make its favorable for low detection (nT or pT) magnetic field sensors. Advances in both layered structures or controlled three-dimensional matrix composites for applications as magnetoelectric nonvolatile memory elements are both required. Robust cross-coupling among various parameters with more than four logic states and its compatibility with complementary-symmetry metal–oxide–semiconductor (CMOS) technology are the main requirements for heterostructure magnetoelectric thin films. The major hurdles in the area of magnetoelectric nonvolatile memory elements are poor interfacial properties and weak magnetoelectric coupling for high density fast read and write processes. Another potential area is strained coupled magneto-electric composites where magnetostriction mediated dimensional change in the magnetic layer effectively modulate the change in the dimension of piezoelectric layers via piezostriction, which leads to a strong ME coupling where their coupling magnitude is sufficient for magnetic field sensors. Energy harvesters based on magnetoelectric composites are also intriguing concepts to capture various types of waste energy, in the form mechanical vibration, pressure, wind energy, hydrothermal and waste temperature.

View Accepted Manuscript (DOE)

Research Organization:: Louisiana State Univ., Baton Rouge, LA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002136

OSTI ID:: 1867231

Journal Information:: Encyclopedia of Smart Materials, Journal Name: Encyclopedia of Smart Materials Vol. 2021; ISSN 9999-0053

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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