Electro and electro-photo plasticity of CdZnTeSe and CdZnTe
- Charles Univ., Prague (Czech Republic)
- Savannah River National Laboratory (SRNL), Aiken, SC (United States)
In this work, we studied the influence of applied bias on of the Vickers microhardness HV 0.025 of CdZnTeSe and CdZnTe semi-insulating samples without and with the illumination of light at 870 nm. We observed that a small applied bias results in the hardening of the material. The effect is strongest at a bias of ± 0.5 V and is further strengthened by additional illumination. We suggest that the observed positive electro and electro-photo plastic effects in CdZnTeSe and CdZnTe can be explained by an increase in the concentration of free electrons and holes injected from contacts in a biased sample or generated by illumination. These free carriers can be trapped at dislocations and induce a reconstruction of bonds at the dislocation core. The necessity to break the bonds before dislocation glide results in an increase of microhardness.
- Research Organization:
- Savannah River Site (SRS), Aiken, SC (United States); Savannah River National Laboratory (SRNL), Aiken, SC (United States)
- Sponsoring Organization:
- USDOE Office of Environmental Management (EM); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation
- Grant/Contract Number:
- 89303321CEM000080
- OSTI ID:
- 1915267
- Alternate ID(s):
- OSTI ID: 2315744
- Report Number(s):
- SRNL-STI-2022-00438; TRN: US2312225
- Journal Information:
- Materials Today Communications, Vol. 34; ISSN 2352-4928
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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