skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Spectral Dependence of the Photoplastic Effect in CdZnTe and CdZnTeSe

Journal Article · · Materials
DOI:https://doi.org/10.3390/ma14061465· OSTI ID:1815474
 [1];  [1];  [1];  [1]; ORCiD logo [1];  [2]; ORCiD logo [1];  [1];  [1];  [3];  [3]
  1. Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics
  2. Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics; Mansoura Univ. (Egypt). Faculty of Science. Physics Dept.
  3. Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

We studied the spectral dependence of the Vickers microhardness HV0.025 of CdZnTe and CdZnTeSe samples upon illumination and found out that it increases over the entire applied spectral range of 1540–750 nm. We also found out that the photoconductivity and microhardness are correlated. We observed changes in the correlation diagram (change of slope and an abrupt change of HV0.025 at several wavelengths of the illuminating light). Based on measurements of the relative changes of the space charge upon illumination using the Pockels effect, we suggest that the observed spectral dependence of positive photoplastic effect in CdZnTe and CdZnTeSe can be explained by the trapping of photoinduced electrons and holes, which affects the motion of the partial dislocations. The underlying physical explanation relies on the assumption that reconstructed bonds break before dislocation glide.

Research Organization:
Lockheed Martin Corporation, Littleton, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1815474
Journal Information:
Materials, Vol. 14, Issue 6; ISSN 1996-1944
Publisher:
MDPICopyright Statement
Country of Publication:
United States
Language:
English

References (23)

Photoplastic Behavior of CdTe journal June 1972
Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect journal August 2016
Review of optical applications of CdTe journal January 1977
Photoplastic Effect in ZnO journal March 1970
On the time delay of the photoplastic effect journal February 1986
Extended Defects in CdZnTe Radiation Detectors journal August 2009
Further investigations of a radiation detector based on ionization-induced modulation of optical polarization journal February 2021
Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials journal January 2021
Luminescence methodology to determine grain-boundary, grain-interior, and surface recombination in thin-film solar cells journal September 2018
Influence of dislocations on electrical conductivity of CdTe journal April 1974
Photoplasticity and photonic control of dislocation densities in type II‐VI semiconductors journal October 1995
Carrier-trapping induced reconstruction of partial-dislocation cores responsible for light-illumination controlled plasticity in an inorganic semiconductor journal August 2020
Growth and characterization of bulk HgZnTe crystals journal December 1986
Vickers indentation on the {001} faces of ZnS sphalerite under UV illumination and in darkness. Crack patterns and rosette microstructure journal August 1996
Dislocation-induced electronic levels in semi-insulated CdTe
  • Babentsov, V.; Boiko, V.; Schepelskii, G. A.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 633 https://doi.org/10.1016/j.nima.2010.06.129
journal May 2011
The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells journal June 2017
Evidence for the electron traps at dislocations in GaAs crystals journal February 1989
Cadmium zinc telluride and its use as a nuclear radiation detector material journal April 2001
Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe journal August 2010
Electrical properties of dislocations and point defects in plastically deformed silicon journal November 1985
Defect levels of semi-insulating CdMnTe:In crystals journal June 2011
Improve molecular beam epitaxy growth of HgCdTe on CdZnTe (211)B substrates using interfacial layers of HgTe∕CdTe superlattices journal January 2006
First-principles study of atomic and electronic structures of 60 perfect and 30 / 90 partial glide dislocations in CdTe journal May 2016

Similar Records

Electro and electro-photo plasticity of CdZnTeSe and CdZnTe
Journal Article · Fri Dec 09 00:00:00 EST 2022 · Materials Today Communications · OSTI ID:1815474

Microhardness Study of CdZnTeSe Crystals for X-ray and Gamma ray Detectors
Conference · Sat Oct 26 00:00:00 EDT 2019 · OSTI ID:1815474

Photoplastic effect and Vickers microhardness in ZnS sphalerite
Journal Article · Fri Mar 15 00:00:00 EST 1996 · Scripta Materialia · OSTI ID:1815474