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Title: Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector

Abstract

A study of deep levels in CdZnTeSe radiation-detection materials is presented. The approach relies on electrical methods that combine time and temperature evolution of the electric field and electric current after switching on the bias voltage. Two optical methods were also applied to study the deep levels. The first method utilizes the temperature and temporal analysis of the electric field evolution after switching off an additional light illuminating the sample at a wavelength of 940 nm. The second method involved measuring of the electric field spectral dependence during near infrared illumination. The results are compared with those obtained with the high-quality CdZnTe detector-grade material. Here, we conclude that the introduction of Se into the lattice leads to a shift of the second ionization level of the Cd vacancy toward the conduction band, as predicted recently by first-principles calculations based on screened hybrid functionals.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [1];  [3]
  1. Charles Univ., Prague (Czech Republic)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
Publication Date:
Research Org.:
Savannah River National Lab (SRNL), Aiken, SC (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Environmental Management (EM); USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1558267
Alternate Identifier(s):
OSTI ID: 1529877
Report Number(s):
SRNL-STI-2018-00420; SRNL-STI-2018-00335; BNL-211816-2019-JAAM
Journal ID: ISSN 0018-9499
Grant/Contract Number:  
AC09-08SR22470; SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 66; Journal Issue: 8; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CdZnTeSe; deep levels; electric field dynamics; energy bandgap; Pockels effect; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Rejhon, M., Dedic, V., Beran, L., Roy, U. N., Franc, J., and James, Ralph B. Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector. United States: N. p., 2019. Web. doi:10.1109/TNS.2019.2925311.
Rejhon, M., Dedic, V., Beran, L., Roy, U. N., Franc, J., & James, Ralph B. Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector. United States. https://doi.org/10.1109/TNS.2019.2925311
Rejhon, M., Dedic, V., Beran, L., Roy, U. N., Franc, J., and James, Ralph B. Thu . "Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector". United States. https://doi.org/10.1109/TNS.2019.2925311. https://www.osti.gov/servlets/purl/1558267.
@article{osti_1558267,
title = {Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector},
author = {Rejhon, M. and Dedic, V. and Beran, L. and Roy, U. N. and Franc, J. and James, Ralph B.},
abstractNote = {A study of deep levels in CdZnTeSe radiation-detection materials is presented. The approach relies on electrical methods that combine time and temperature evolution of the electric field and electric current after switching on the bias voltage. Two optical methods were also applied to study the deep levels. The first method utilizes the temperature and temporal analysis of the electric field evolution after switching off an additional light illuminating the sample at a wavelength of 940 nm. The second method involved measuring of the electric field spectral dependence during near infrared illumination. The results are compared with those obtained with the high-quality CdZnTe detector-grade material. Here, we conclude that the introduction of Se into the lattice leads to a shift of the second ionization level of the Cd vacancy toward the conduction band, as predicted recently by first-principles calculations based on screened hybrid functionals.},
doi = {10.1109/TNS.2019.2925311},
url = {https://www.osti.gov/biblio/1558267}, journal = {IEEE Transactions on Nuclear Science},
issn = {0018-9499},
number = 8,
volume = 66,
place = {United States},
year = {2019},
month = {6}
}

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