Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Ruiz, Isaac; Vizkelethy, Gyorgy; McDonald, Anthony E.; Howell, Stephen W.; Thelen, Paul M.; Goldflam, Michael D.; Beechem, Thomas E.

doi:10.1063/5.0118098

Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Journal Article · Mon Nov 07 23:00:00 EST 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0118098· OSTI ID:1897574

Ruiz, Isaac; ; McDonald, Anthony E.; Howell, Stephen W.; Thelen, Paul M.; Goldflam, Michael D.;

Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

OSTI ID:: 1897574

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 18 Vol. 132; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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