Distinct photoresponse in graphene induced by laser irradiation
- Graphene Research and Characterization Center, Taizhou Sunano New Energy Co., Ltd., Taizhou 225300 (China)
- National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083 (China)
- Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714 (China)
The graphene-based photodetector with tunable p-p{sup +}-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices.
- OSTI ID:
- 22399088
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 106; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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