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Interface Defect Engineering for Improved Graphene-Oxide-Semiconductor Junction Photodetectors

Journal Article · · ACS Applied Nano Materials
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Naval Surface Warfare Center Crane Division, Crane, IN (United States)
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The deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector provides an effective architecture for photodetection, enabling direct readout of photogenerated charge. Because of an inherent gain mechanism proportional to graphene’s high mobility (μ), this detector architecture exhibits large responsivities and signal-to-noise ratios (SNR). The ultimate sensitivity of the D2GOS junction detector may be limited, however, because of the generation of dark charge originating from interface states at the semiconductor/dielectric junction. Here, we examine the performance limitations caused by dark charge and demonstrate its mitigation via the creation of low interface defect junctions enabled by surface passivation. The resulting devices exhibit responsivities exceeding 10 000 A/W—a value which is 10× greater than that of analogous devices without the passivating thermal oxide. Finally, with cooling of the detector, the responsivity further increases to over 25 000 A/W, underscoring the impact of surface generation on performance and thus the necessity of minimizing interfacial defects for this class of photodetector.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1667410
Report Number(s):
SAND--2020-8923J; 690198
Journal Information:
ACS Applied Nano Materials, Journal Name: ACS Applied Nano Materials Journal Issue: 10 Vol. 2; ISSN 2574-0970
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

Figures / Tables (6)

Figure 1(p. 3)figure Figure 1
Table 1(p. 5)table Table 1
Figure 2(p. 6)figure Figure 2
Figure 3(p. 7)figure Figure 3
Figure 4(p. 8)figure Figure 4
Figure 5(p. 10)figure Figure 5

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Related Subjects

2D detector
2D materials
42 ENGINEERING
GOS junction
graphene
high responsivity
interface defects
photodetector