Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities

Howell, Stephen W.; Ruiz, Isaac; Davids, Paul S.; Harrison, Richard K.; Smith, Sean W.; Goldflam, Michael D.; Martin, Jeffrey B.; Martinez, Nicholas J.; Beechem, Thomas E.

doi:10.1038/s41598-017-14934-4

Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities

Journal Article · Mon Nov 06 23:00:00 EST 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-14934-4· OSTI ID:1624359

Howell, Stephen W. ^[1]; Ruiz, Isaac ^[2]; ^[2]; Harrison, Richard K. ^[2]; Smith, Sean W. ^[2]; Goldflam, Michael D. ^[2]; Martin, Jeffrey B. ^[2]; Martinez, Nicholas J. ^[2]; Beechem, Thomas E. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); DOE/OSTI
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

A sensitive optical detector is presented based on a deeply depleted graphene-insulator-semiconducting (D²GIS) junction, which offers the possibility of simultaneously leveraging the advantages of both charge integration and localized amplification. Direct read-out and built-in amplification are accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated within a deeply depleted low-doped silicon substrate. Analogous to a depleted metal-oxide-semiconducting junction, photo-generated charge collects in the potential well that forms at the semiconductor/insulator interface and induces charges of opposite polarity within the graphene film modifying its conductivity. This device enables simultaneous photo-induced charge integration with continuous “on detector” readout through use of graphene. The resulting devices exhibit responsivities as high as 2,500 A/W (25,000 S/W) for visible wavelengths and a dynamic range of 30 dB. As both the graphene and device principles are transferrable to arbitrary semiconductor absorbers, D2GIS devices offer a high-performance paradigm for imaging across the electromagnetic spectrum

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT) )

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: NA0003525

OSTI ID:: 1624359

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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