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Radiation detector using a graphene amplifier layer

Patent ·
OSTI ID:1892763
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A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D2GOS) detector.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000; NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
11,287,536
Application Number:
16/162,756
OSTI ID:
1892763
Country of Publication:
United States
Language:
English

References (12)

Van der Waals heterostructures journal July 2013
Tunable infrared plasmonic devices using graphene/insulator stacks journal April 2012
Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities journal November 2017
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric journal February 2009
Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides journal October 2009
Effective mobility of single-layer graphene transistors as a function of channel dimensions journal May 2011
A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate journal August 2014
Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates journal September 2015
Detection of ionizing radiation using graphene field effect transistors
  • Foxe, M.; Lopez, G.; Childres, I.
  • 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2009), 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) https://doi.org/10.1109/NSSMIC.2009.5401864
conference October 2009
Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection journal May 2012
Exploring Graphene Field Effect Transistor Devices to Improve Spectral Resolution of Semiconductor Radiation Detectors report December 2013
Metal-Insulator-Semiconductor Photodetectors journal September 2010

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